Package comprising a substrate with interconnect routing over solder resist layer and an integrated device coupled to the substrate and method for manufacturing the package

ABSTRACT

A package comprising a substrate and an integrated device coupled to the substrate. The substrate includes (i) at least one inner dielectric layer, (ii) a plurality of interconnects located in the at least one inner dielectric layer, where the plurality of interconnects includes a pad located on a bottom metal layer of the substrate, (iii) an outer dielectric layer located over the at least one dielectric layer, (iv) at least one routing interconnect coupled to the plurality of interconnects, where the at least one routing interconnect is located over the outer dielectric layer, where the at least one routing interconnect is located below the bottom metal layer of the substrate, and (v) a cover dielectric layer located over the outer dielectric layer and the at least one routing interconnect. The package includes a solder interconnect coupled to the pad located on the bottom metal layer of the substrate.

FIELD

Various features relate to packages that include an integrated device,but more specifically to a package that includes an integrated device, asubstrate, and interconnects located over solder resist layer.

BACKGROUND

FIG. 1 illustrates a package 100 that includes a substrate 102, anintegrated device 104, and an encapsulation layer 108. The substrate 102includes at least one dielectric layer 120, a plurality of interconnects122, and a plurality of solder interconnects 124. A plurality of solderinterconnects 144 is coupled to the substrate 102 and the integrateddevice 104. The encapsulation layer 108 encapsulates the integrateddevice 104 and the plurality of solder interconnects 144. Fabricating asmall package that includes a substrate with high density interconnectscan be challenging. There is an ongoing need to provide more compactpackages that can accommodate high density interconnects and/or high pincounts.

SUMMARY

Various features relate to packages that include an integrated device,but more specifically to a package that includes an integrated device, asubstrate, and interconnects located over solder resist layer.

One example provides a package comprising a substrate and an integrateddevice coupled to the substrate. The substrate includes (i) at least oneinner dielectric layer, (ii) a plurality of interconnects located in theat least one inner dielectric layer, where the plurality ofinterconnects includes a pad located on a bottom metal layer of thesubstrate, (iii) an outer dielectric layer located over the at least oneinner dielectric layer, (iv) at least one routing interconnect coupledto the plurality of interconnects, where the at least one routinginterconnect is located over the outer dielectric layer, where the atleast one routing interconnect is located over the bottom metal layer ofthe substrate, and (v) a cover dielectric layer located over the outerdielectric layer and the at least one routing interconnect. The packageincludes a solder interconnect coupled to the pad located on the bottommetal layer of the substrate.

Another example provides a package comprising a substrate and anintegrated device coupled to the substrate. The substrate includes (i)at least one inner dielectric layer, (ii) a plurality of interconnectslocated in the at least one inner dielectric layer, where the pluralityof interconnects includes a pad located on a bottom metal layer of thesubstrate, (iii) an outer dielectric layer located over the at least oneinner dielectric layer, (iv) means for routing interconnect coupled tothe plurality of interconnects, where the means for routing interconnectis located over the outer dielectric layer, where the means for routinginterconnect is located over the bottom metal layer of the substrate,and (v) a cover dielectric layer located over the outer dielectric layerand the means for routing interconnect. The package includes a solderinterconnect coupled to the pad located on the bottom metal layer of thesubstrate.

Another example provides a method for fabricating package. The methodprovides a substrate. The substrate includes (i) at least one innerdielectric layer; (ii) a plurality of interconnects located in the atleast one inner dielectric layer, wherein the plurality of interconnectsincludes a pad located on a bottom metal layer of the substrate; (iii)an outer dielectric layer located over the at least one inner dielectriclayer; (iv) at least one routing interconnect coupled to the pluralityof interconnects, wherein the at least one routing interconnect islocated over the outer dielectric layer, wherein the at least onerouting interconnect is located over the bottom metal layer of thesubstrate, and (v) a cover dielectric layer located over the outerdielectric layer and the at least one routing interconnect. The methodcouples an integrated device to the substrate. The method couples asolder interconnect to the pad located on the bottom metal layer of thesubstrate.

Another example provides a package comprising a substrate and anintegrated device coupled to the substrate. The substrate includes (i)at least one inner dielectric layer, (ii) a plurality of interconnectslocated in the at least one inner dielectric layer, where the pluralityof interconnects includes a pad located on a bottom metal layer of thesubstrate, (iii) an outer dielectric layer located over the at least oneinner dielectric layer, (iv) a cover dielectric layer located over theat least one inner dielectric layer, (v) at least one routinginterconnect coupled to the plurality of interconnects, where the atleast one routing interconnect is located over the cover dielectriclayer, where the at least one routing interconnect is located over thebottom metal layer of the substrate, and (vi) a second outer dielectriclayer located over the cover dielectric layer and the at least onerouting interconnect. The package includes a solder interconnect coupledto the pad located on the bottom metal layer of the substrate.

BRIEF DESCRIPTION OF THE DRAWINGS

Various features, nature and advantages may become apparent from thedetailed description set forth below when taken in conjunction with thedrawings in which like reference characters identify correspondinglythroughout.

FIG. 1 illustrates a profile view of a package that includes anintegrated device and a substrate.

FIG. 2 illustrates a profile view of a package that includes a substratewith interconnects located over a solder resist layer.

FIG. 3 illustrates a bottom plan view of a package that includes asubstrate with interconnects located over a solder resist layer.

FIG. 4 illustrates a profile view of a package that includes a substratewith interconnects located over an outer dielectric layer.

FIG. 5 (comprising FIGS. 5A-5F) illustrates an exemplary sequence forfabricating a substrate that includes interconnects located over asolder resist layer.

FIG. 6 (comprising FIGS. 6A-6B) illustrates an exemplary sequence forfabricating a substrate that includes interconnects located over anouter dielectric layer.

FIG. 7 illustrates an exemplary flow diagram of a method for fabricatingsubstrate that includes interconnects located over a solder resistlayer.

FIG. 8 (comprising FIGS. 8A-8B) illustrates an exemplary sequence forfabricating a package that includes a substrate with interconnectslocated over a solder resist layer.

FIG. 9 illustrates an exemplary flow diagram of a method for fabricatinga package that includes a substrate with interconnects located over asolder resist layer.

FIG. 10 illustrates a package on package (PoP) that includes a packagecomprising a substrate with interconnects located over a solder resistlayer.

FIG. 11 (comprising FIGS. 11A-11C) illustrates an exemplary sequence forfabricating a package on package (PoP) that includes a packagecomprising a substrate with interconnects located over a solder resistlayer.

FIG. 12 illustrates various electronic devices that may integrate a die,an integrated device, an integrated passive device (IPD), a passivecomponent, a package, and/or a device package described herein.

DETAILED DESCRIPTION

In the following description, specific details are given to provide athorough understanding of the various aspects of the disclosure.However, it will be understood by one of ordinary skill in the art thatthe aspects may be practiced without these specific details. Forexample, circuits may be shown in block diagrams in order to avoidobscuring the aspects in unnecessary detail. In other instances,well-known circuits, structures and techniques may not be shown indetail in order not to obscure the aspects of the disclosure.

The present disclosure describes a package that includes a substrate andan integrated device coupled to the substrate. The substrate includes(i) at least one inner dielectric layer, (ii) a plurality ofinterconnects located at least in the at least one inner dielectriclayer, where the plurality of interconnects includes a pad located on abottom metal layer of the substrate, (iii) an outer dielectric layerlocated over the at least one inner dielectric layer, (iv) at least onerouting interconnect coupled to the plurality of interconnects, wherethe at least one routing interconnect is located over the outerdielectric layer, where the at least one routing interconnect is locatedover the bottom metal layer of the substrate, and (v) a cover dielectriclayer located over the outer dielectric layer and the at least onerouting interconnect, the cover dielectric layer may be coupled to theouter dielectric layer. The package includes a solder interconnectcoupled to the pad located on the bottom metal layer of the substrate.The outer dielectric layer may include a solder resist layer or photoimageable dielectric (PID). The cover dielectric layer may include asolder resist layer or photo imageable dielectric (PID). The at leastone routing interconnect may be located (e.g., laterally located)between a plurality of solder interconnects. The integrated device andthe substrate are coupled together in such a way that a first electricalsignal to and/or from the integrated device, may be configured to travelthrough the plurality of interconnects and the at least routinginterconnect located over the outer dielectric layer substrate. Thisconfiguration where the at least one routing interconnect is locatedover an outer dielectric layer and between solder interconnects, mayallow the space (e.g., lateral space) between solder interconnects ofthe substrate to be utilized for routing, providing more routing realestate without increasing the overall size and form of the substrateand/or the package.

Exemplary Package Comprising a Substrate with Interconnects Located Overan Outer Dielectric Layer

FIG. 2 illustrates a profile view of a package 200 that includesinterconnects located over an outer dielectric layer. The package 200 iscoupled to a board 290 (e.g., printed circuit board (PCB)) through aplurality of solder interconnects 280. The package 200 provides apackage with a compact small factor while also having an improvedrouting interconnect design.

As shown in FIG. 2, the package 200 includes a substrate 202, a firstintegrated device 205, a second integrated device 206, an encapsulationlayer 208 and the plurality of solder interconnects 280.

The substrate 202 includes a first surface (e.g., top surface) and asecond surface (e.g., bottom surface). The substrate 202 includes atleast one inner dielectric layer 220, a plurality of interconnects 222,a solder resist layer 224, an outer dielectric layer 230, a coverdielectric layer 240, and at least one routing interconnect 242. Theplurality of interconnects 222 is located at least in and over the atleast one inner dielectric layer 220. The plurality of interconnects 222includes at least one pad 222 a located on a bottom metal layer of thesubstrate 202. The pad 222 a is configured to be coupled to a solderinterconnect from the plurality of solder interconnects 280. The outerdielectric layer 230 is located over the at least one dielectric layer220. The at least one routing interconnect 242 is coupled to theplurality of interconnects 222. The at least one routing interconnect242 is located over the outer dielectric layer 230. The at least onerouting interconnect 242 is located over (or under, depending on how topand bottom are arbitrarily defined) the bottom metal layer of substrate202. The at least one routing interconnect 242 may be located betweenthe bottom metal layer of substrate 202 and the board 290. The coverdielectric layer 240 is located over the outer dielectric layer 230 andthe at least one routing interconnect 242. The at least one routinginterconnect 242 may be means for routing interconnect. The coverdielectric layer 240 may be coupled to the outer dielectric layer 230.

As used in the disclosure, when a particular dielectric layer is located“over” another dielectric layer, the particular dielectric layer may belocated above or below the another dielectric layer, depending on how abottom (e.g., bottom layer) or top (e.g., top layer) is arbitrarilydefined. A particular dielectric layer that is located “over” anotherdielectric layer (whether above or below) may mean that the particulardielectric layer is coupled to a surface of the another dielectriclayer. For example, a surface of the particular dielectric layer may bein contact (e.g., touching) with another surface of the anotherdielectric layer.

The outer dielectric layer 230 may be coupled and located over (e.g.,below) a bottom surface of the at least one inner dielectric layer 220.The at least one routing interconnect 242 and the cover dielectric layer240 may be coupled and located over (e.g., below) a bottom surface ofthe outer dielectric layer 230. The at least one routing interconnect242 may be located laterally between the plurality of solderinterconnects 280. The at least one routing interconnect 242 may be freeof direct contact with the plurality of solder interconnects 280. The atleast one routing interconnect 242 may be coupled to the plurality ofinterconnects 222. The outer dielectric layer 230, the cover dielectriclayer 240 and the at least one routing interconnect 242 may be part ofthe substrate 202.

The bottom metal layer of the substrate 202 may be a metal layer of thesubstrate 202 that includes interconnects (such as pads) that areconfigured to be coupled to solder interconnects. The bottom metal layerof the substrate 202 may not be necessarily the lowest metal layer ofthe substrate 202 or the metal layer of the substrate 202 that isclosest to a board (when the substrate 202 is coupled to a board). Inthe example of FIG. 2, the bottom metal layer of the substrate 202 maybe the metal layer that includes the interconnects (such as pad 222 a)that are coupled (e.g., directly coupled) to the plurality of solderinterconnects 280. The plurality of solder interconnects 280 is furthercoupled to the board 290 (e.g., printed circuit board). The bottom metallayer of the substrate 202 may be a metal layer that is closest (e.g.,vertically closest) to the plurality of solder interconnects 280 withoutbeing laterally positioned (e.g., along X-axis and/or Y-axis) along asame plane as the plurality of solder interconnects 280. For the purposeof the disclose, a bottom metal layer of a substrate may be defined asto not include metal layer(s) that are located laterally to theplurality of solder interconnects 280.

As shown in FIG. 2, the plurality of solder interconnects 280 is coupledto the substrate 202 (e.g., coupled to the bottom metal layer of thesubstrate 202) such that the at least one routing interconnect 242 islocated laterally to the plurality of solder interconnects 280 and/orlocated between the plurality of solder interconnects 280.

The use of the at least one routing interconnect 242 helps save spaceand helps reduce the overall height and footprint of the package 200,utilizing space that would not otherwise be used. Moreover, the use ofthe at least one routing interconnect 242 may help reduce routingcongestion (e.g., local routing congestion) in the substrate 202. Thisconfiguration where the at least one routing interconnect 242 is locatedbetween the solder interconnects 280 (but may not be in direct contactwith the solder interconnects), uses a space that would otherwise not beused. In particular, this configuration may allow the space (e.g.,lateral space) between solder interconnects 280 of the substrate 202 tobe utilized for routing, providing more routing real estate withoutincreasing the overall size and form of the substrate and/or thepackage.

It is noted that the at least one routing interconnect 242 may also beformed over another surface (e.g., top surface) of the substrate 202. Insuch an instance, another cover dielectric layer and/or outer dielectricmay be formed over the second surface of the substrate 202. Thus, insome implementations, at least one routing interconnect, a coverdielectric layer and/or an outer dielectric layer may be formed over abottom surface and/or a top surface of the substrate 202.

The outer dielectric layer 230 may include a different material than theat least one inner dielectric layer 220. The cover dielectric layer 240may include a different material than the at least one inner dielectriclayer 220. The cover dielectric layer 240 may include a differentmaterial than the at least one inner dielectric layer 220 and the outerdielectric layer 230. The cover dielectric layer 240 and the outerdielectric layer 230, may each include a different material than the atleast one inner dielectric layer 220. The cover dielectric layer 240 andthe outer dielectric layer 230 may include the same material.

The at least one inner dielectric layer 220 may include a copper cladlaminate (CCL) core, a prepreg, an ajinomoto build up film (ABF), and/ora resin coated copper (RCC). The outer dielectric layer 230 may includea solder resist layer and/or a photo imageable dielectric (PID). Thecover dielectric layer 240 may include a solder resist layer and/or aphoto imageable dielectric (PID).

The first integrated device 205 is coupled to a first surface (e.g., topsurface) of the substrate 202 through a plurality of interconnects 250.The plurality of interconnects 250 may include copper pillars and/orsolder interconnects. The second integrated device 206 is coupled to thefirst surface of the substrate 202 through a plurality of interconnects260. The plurality of interconnects 260 may include copper pillarsand/or solder interconnects. The encapsulation layer 208 is located overand coupled to the first surface of the substrate 202 and mayencapsulate the first integrated device 205 and the second integrateddevice 206. The encapsulation layer 208 may include a mold, a resin, anepoxy and/or polymer. The encapsulation layer 208 may be means forencapsulation.

The integrated device (e.g., 205, 206) may include a die (e.g.,semiconductor bare die). The integrated device may include a radiofrequency (RF) device, a passive device, a filter, a capacitor, aninductor, an antenna, a transmitter, a receiver, a GaAs based integrateddevice, a surface acoustic wave (SAW) filters, a bulk acoustic wave(BAW) filter, a light emitting diode (LED) integrated device, a siliconcarbide (SiC) based integrated device, memory, and/or combinationsthereof.

Different implementations may couple different components to thesubstrate 202. Other components (e.g., surface mounted components) thatmay be coupled to the substrate 202 include a passive device (e.g.,capacitor).

Some electrical signals (e.g., first electrical signal, secondelectrical signals) to and from integrated devices (e.g., 205, 206) maytravel through the plurality of interconnects 222 and the at least onerouting interconnect 242. For example, some signals to and/or from anintegrated device may travel through a first plurality of interconnectsfrom the plurality of interconnects 222, the at least one routinginterconnect 242 and a second plurality of interconnects from theplurality of interconnects 222. The at least one routing interconnect242 may allow the package 200 to provide higher I/O pin counts, withouthaving to increase the size of the package 200. For example, using theat least one routing interconnect 242 may allow the substrate 202 tohave a lower number of metal layers, which may help reduce the overallheight of the package 200. The at least one routing interconnect 242 mayhelp reduce congestion and/or entanglement in certain regions (e.g.,regions near an integrated device) of the substrate 202 due to the highnumber of pin count and/or number of netlists. A netlist is anarrangement of components of a circuit and how the components areelectrically coupled together.

Different implementations may include a substrate that includes adifferent number of metal layers. Moreover, different implementationsmay include a substrate that have different shapes and/or sizes. Thesubstrate 202 may include a core layer. The substrate 202 may be acoreless substrate. The substrate 202 may be fabricated using differentfabrication processes, including a semi-additive process (SAP) and amodified semi-additive process (mSAP). The plurality of interconnects222 and the at least one routing interconnect 242 may have differentshapes and/or sizes. In some implementations, the plurality ofinterconnects 222 may include a redistribution interconnect. In someimplementations, the at least one routing interconnect 242 may includeat least one routing redistribution interconnect. A redistributioninterconnect may be fabricated using redistribution layer (RDL)fabrication process. Examples of a method for fabricating a substrateare illustrated and described below in FIGS. 5A-5F and 6A-6B.

FIG. 3 illustrates an exemplary bottom plan view of the package 200. Asshown in FIG. 3, the plurality of solder interconnects 280 is coupled tothe substrate 202. The substrate 202 includes the outer dielectric layer230, the at least one routing interconnect 242 and the cover dielectriclayer 240. The at least one routing interconnect 242 is located over theouter dielectric layer 230. The cover dielectric layer 240 is locatedover the at least one routing interconnect 242 and the outer dielectriclayer 230. The at least one routing interconnect 242 is located (e.g.,laterally located) between the plurality of solder interconnects 280.The at least one routing interconnect 242, which may include at leastone routing pad, at least one routing trace and/or at least one routingvia, may travel in and/or along a surface of the outer dielectric layer230. The at least one routing interconnect 242 may be located (e.g.,located laterally) between the plurality of solder interconnects 280.

FIG. 4 illustrates a package 400 that includes the substrate 402. Thepackage 400 is similar to the package 200, and thus includes similarcomponents as the package 200. The substrate 402 is similar to thesubstrate 202, and thus includes similar components as the substrate202. The substrate 402 includes a first surface (e.g., top surface) anda second surface (e.g., bottom surface). The substrate 402 includes atleast one inner dielectric layer 220, a plurality of interconnects 222,a solder resist layer 224, an outer dielectric layer 230, an outerdielectric layer 430, a cover dielectric layer 240, and at least onerouting interconnect 242. The plurality of interconnects 222 is locatedat least in and over the at least one inner dielectric layer 220. Theplurality of interconnects 222 includes at least one pad 222 a locatedon a bottom metal layer of the substrate 402. The pad 222 a isconfigured to be coupled to a solder interconnect from the plurality ofsolder interconnects 280. The at least one routing interconnect 242 iscoupled to the plurality of interconnects 222. The at least one routinginterconnect 242 is located over the cover dielectric layer 240. The atleast one routing interconnect 242 is located over (or under, dependingon how top and bottom are arbitrarily defined) the bottom metal layer ofsubstrate 402. The outer dielectric layer 230 may be located over the atleast one inner dielectric layer 220. The outer dielectric layer 230 maybe located laterally to the cover dielectric layer 240. The outerdielectric layer 430 is located over the cover dielectric layer 240 andthe at least one routing interconnect 242. The outer dielectric layer430 may be a second outer dielectric layer. The outer dielectric layer430 may be considered part of the outer dielectric layer 230, and viceversa. Thus, in some implementations, an outer dielectric layer (whichmay include the outer dielectric layer 230 and the outer dielectriclayer 430) may be located over (e.g., below) the at least one innerdielectric layer 220, the cover dielectric layer 240, and the at leastone routing interconnect 242. The cover dielectric laser 240 may locatedbetween the at least one inner dielectric layer 220 and the outerdielectric layer 430. The cover dielectric laser 240 may be coupled tothe at least one inner dielectric layer 220 and the outer dielectriclayer 430.

As used in the disclosure, when a particular dielectric layer is located“over” another dielectric layer, the particular dielectric layer may belocated above or below the another dielectric layer, depending on how abottom (e.g., bottom layer) or top (e.g., top layer) is arbitrarilydefined. A particular dielectric layer that is located “over” anotherdielectric layer (whether above or below) may mean that the particulardielectric layer is coupled to a surface of the another dielectriclayer. For example, a surface of the particular dielectric layer may bein contact (e.g., touching) with another surface of the anotherdielectric layer.

The outer dielectric layer 230 may be coupled and located over (e.g.,below) a bottom surface of the at least one inner dielectric layer 220.The cover dielectric layer 240 may be coupled and located over (e.g.,below) a bottom surface of the at least one inner dielectric layer 220.The cover dielectric layer 240 may be co-planar to the outer dielectriclayer 230. The at least one routing interconnect 242 may be coupled andlocated over (e.g., below) a bottom surface of the cover dielectriclayer 240. The outer dielectric layer 430 may be located over (e.g.,below) the at least one routing interconnect 242 and a bottom surface ofthe cover dielectric layer 240. The at least one routing interconnect242 may be located laterally between the plurality of solderinterconnects 280. The at least one routing interconnect 242 may be freeof direct contact with the plurality of solder interconnects 280. The atleast one routing interconnect 242 may be coupled to the plurality ofinterconnects 222. The outer dielectric layer 230, the outer dielectriclayer 430, the cover dielectric layer 240 and the at least one routinginterconnect 242 may be part of the substrate 402.

It is noted that the at least one routing interconnect 242 may also beformed over the first surface (e.g., top surface) of the substrate 402.In such an instance, another cover dielectric layer and/or outerdielectric may be formed over the first surface of the substrate 402.Thus, in some implementations, at least one routing interconnect, acover dielectric layer and/or an outer dielectric layer may be formedover a bottom surface and/or a top surface of the substrate 402.

The outer dielectric layer (e.g., 230, 430) may include a differentmaterial than the at least one inner dielectric layer 220. The coverdielectric layer 240 may include a different material than the at leastone inner dielectric layer 220. The cover dielectric layer 240 mayinclude a different material than the at least one inner dielectriclayer 220 and the outer dielectric layer (e.g., 230, 430). The coverdielectric layer 240 and the outer dielectric layer (e.g., 230, 430),may each include a different material than the at least one innerdielectric layer 220. The cover dielectric layer 240 and the outerdielectric layer (e.g., 230, 430) may include the same material.

Having described various packages with routing interconnects, processesfor fabricating a substrate with routing interconnects will now bedescribed below.

Exemplary Sequence for Fabricating a Substrate Comprising RoutingInterconnects

In some implementations, fabricating a substrate includes severalprocesses. FIG. 5 (which includes FIGS. 5A-5F) illustrates an exemplarysequence for providing or fabricating a substrate. In someimplementations, the sequence of FIGS. 5A-5F may be used to provide orfabricate the substrate 202 of FIG. 2. However, the process of FIGS.5A-5F may be used to fabricate any of the substrates described in thedisclosure.

It should be noted that the sequence of FIGS. 5A-5F may combine one ormore stages in order to simplify and/or clarify the sequence forproviding or fabricating a substrate. In some implementations, the orderof the processes may be changed or modified. In some implementations,one or more of processes may be replaced or substituted withoutdeparting from the spirit of the disclosure.

Stage 1, as shown in FIG. 5A, illustrates a state after a carrier 500 isprovided and a metal layer is formed over the carrier 500. The metallayer may be patterned to form interconnects 502. A plating process andetching process may be used to form the metal layer and interconnects.

Stage 2 illustrates a state after a dielectric layer 520 is formed overthe carrier 500 and the interconnects 502. The dielectric layer 520 mayinclude polyimide. However, different implementations may use differentmaterials for the dielectric layer. The dielectric layer 520 may be aninner dielectric layer.

Stage 3 illustrates a state after at least one cavity 510 is formed inthe dielectric layer 520. The at least one cavity 510 may be formedusing an etching process (e.g., photo etching process) or laser process.

Stage 4 illustrates a state after interconnects 512 are formed in andover the dielectric layer 520. For example, a via, pad and/or traces maybe formed. A plating process may be used to form the interconnects. Theinterconnects 512 may be part of the plurality of interconnects 222.

Stage 5 illustrates a state after another dielectric layer 522 is formedover the dielectric layer 520. The dielectric layer 522 may be the samematerial as the dielectric layer 520. However, different implementationsmay use different materials for the dielectric layer. The dielectriclayer 522 may be an inner dielectric layer.

Stage 6, as shown in FIG. 5B, illustrates a state after at least onecavity 530 is formed in the dielectric layer 522. An etching process orlaser process may be used to form the at least one cavity 530.

Stage 7 illustrates a state after interconnects 514 are formed in andover the dielectric layer 522. For example, via, pad and/or trace may beformed. A plating process may be used to form the interconnects. Theinterconnects 514 may be part of the plurality of interconnects 222.

Stage 8 illustrates a state after another dielectric layer 524 is formedover the dielectric layer 522. The dielectric layer 524 may be the samematerial as the dielectric layer 520. However, different implementationsmay use different materials for the dielectric layer. The dielectriclayer 524 may be an inner dielectric layer.

Stage 9 illustrates a state after at least one cavity 540 is formed inthe dielectric layer 524. An etching process or laser process may beused to form the at least one cavity 540.

Stage 10, as shown in FIG. 5C, illustrates a state after interconnects516 are formed in and over the dielectric layer 524. For example, via,pad and/or trace may be formed. A plating process may be used to formthe interconnects.

Some or all of the interconnects 502, 512, 514 and/or 516 may define theplurality of interconnects 222 of the substrate 202. The dielectriclayers 520, 522, 524 may be represented by the at least one innerdielectric layer 220.

Stage 11 illustrates a state after the carrier 500 is decoupled (e.g.,removed, grinded out) from the at least one inner dielectric layer 220,leaving the substrate 202.

Stage 12 illustrates a state after the solder resist layer 224 and theouter dielectric layer 230 are formed over the substrate 202. Adeposition process may be used to dispose the solder resist layer 224and the outer dielectric layer 230 over the substrate 202. For example,the solder resist layer 224 may be disposed over (e.g., above) a firstsurface (e.g., top surface) of the at least one inner dielectric layer220, and the outer dielectric layer 230 may be disposed over (e.g.,below) a second surface (e.g., bottom surface) of the at least one innerdielectric layer 220. A top surface and a bottom surface may be definedarbitrarily. Different implementations may define a top or a bottomdifferently.

Stage 13, as shown in FIG. 5D, illustrates a state after cavities 560are formed in the outer dielectric layer 230. A laser process and/or anetching process may be used to form the cavities 560.

Stage 14 illustrates a state after a mask 570 is formed over the outerdielectric layer 230.

Stage 15 illustrates a state after portions of the mask 570 are opened,exposing portions of the outer dielectric layer 230 and some of theinterconnects from the plurality of interconnects 222. An etchingprocess may be used to open portions of the mask 570.

Stage 16, as shown in FIG. 5E, illustrates a state after at least onerouting interconnect 242 is formed in and over the outer dielectriclayer 230. For example, a routing via, a routing pad and/or a routingtrace may be formed. A plating process may be used to form the routinginterconnects.

Stage 17 illustrates a state after the cover dielectric layer 240 isformed over the at least one routing interconnect 242 and the outerdielectric layer 230. A deposition process may be used to dispose thecover dielectric layer 240 over the at least one routing interconnect242 and the outer dielectric layer 230.

Stage 18, as shown in FIG. 5F, illustrates a state after the mask 570 isremoved. An etching process may be used to remove or couple the mask570.

Stage 19 illustrates a state after a solder interconnect (from theplurality of solder interconnects 280) is coupled to the plurality ofinterconnects 222. The solder interconnect 280 may be coupled to the pad222 a (which is part of the plurality of interconnects 222). The pad 222a may be located on a bottom metal layer of the substrate 202. Stage 19may illustrate the substrate 202 that includes at least one routinginterconnect 242 located between solder interconnects 280, as describedin FIG. 2.

Different implementations may use different processes for forming themetal layer(s). In some implementations, a chemical vapor deposition(CVD) process and/or a physical vapor deposition (PVD) process forforming the metal layer(s). For example, a sputtering process, a spraycoating process, and/or a plating process may be used to form the metallayer(s).

Exemplary Sequence for Fabricating a Substrate Comprising RoutingInterconnects

In some implementations, fabricating a substrate includes severalprocesses. FIG. 6 (which includes FIGS. 6A-6B) illustrates an exemplarysequence for providing or fabricating a substrate. In someimplementations, the sequence of FIGS. 6A-6B may be used to provide orfabricate the substrate 402 of FIG. 4. However, the process of FIGS.6A-6B may be used to fabricate any of the substrates described in thedisclosure.

It should be noted that the sequence of FIGS. 6A-6B may combine one ormore stages in order to simplify and/or clarify the sequence forproviding or fabricating a substrate. In some implementations, the orderof the processes may be changed or modified. In some implementations,one or more of processes may be replaced or substituted withoutdeparting from the spirit of the disclosure.

Stage 1, as shown in FIG. 6A, illustrates a state after a substrate 402that includes the at least one inner dielectric layer 220 and theplurality of interconnects 222, is provided. The substrate 402 of Stage1 of FIG. 6A may be similar to the substrate 202 of Stage 11 of FIG. 5C.In some implementations, the substrate 402 of Stage 1 of FIG. 6A may befabricated as shown and described in Stages 1-11 of FIGS. 5A-5C.

Stage 2 illustrates a state after the solder resist layer 224 and thecover dielectric layer 240 are formed over the substrate 402. Adeposition process may be used to dispose the solder resist layer 224and the cover dielectric layer 240 over the substrate 402.

Stage 3 illustrates a state after portions of the cover dielectric layer240 are removed and cavities 640 are formed in the cover dielectriclayer 240. A laser process and/or an etching process may be used to formthe cavities 640 and/or remove portions of the cover dielectric layer240.

Stage 4, as shown in FIG. 6B, illustrates a state after at least onerouting interconnect 242 is formed in and over the cover dielectriclayer 240. For example, a routing via, a routing pad and/or a routingtrace may be formed. A plating process may be used to form the routinginterconnects.

Stage 5 illustrates a state after the outer dielectric layer 230 isformed over the at least one routing interconnect 242 and the coverdielectric layer 240. A deposition process may be used to dispose theouter dielectric layer 230 over the at least one routing interconnect242 and the cover dielectric layer 240. A laser process and/or anetching process may be used to form the cavity 630 in the outerdielectric layer 230.

Stage 6 illustrates a state after a solder interconnect (from theplurality of solder interconnects 280) is coupled to the plurality ofinterconnects 222. The solder interconnect 280 may be coupled to the pad222 a (which is part of the plurality of interconnects 222). The pad 222a may be located on a bottom metal layer of the substrate 402. Stage 6may illustrate the substrate 402 that includes at least one routinginterconnect 242 located between solder interconnects 280, as describedin FIG. 4.

Different implementations may use different processes for forming themetal layer(s). In some implementations, a chemical vapor deposition(CVD) process and/or a physical vapor deposition (PVD) process forforming the metal layer(s). For example, a sputtering process, a spraycoating process, and/or a plating process may be used to form the metallayer(s).

Exemplary Flow Diagram of a Method for Fabricating a Substrate

In some implementations, fabricating a substrate includes severalprocesses. FIG. 7 illustrates an exemplary flow diagram of a method 700for providing or fabricating a substrate. In some implementations, themethod 700 of FIG. 7 may be used to provide or fabricate the substrateof FIG. 2. For example, the method of FIG. 7 may be used to fabricatethe substrate 202 and/or the substrate 402.

It should be noted that the method of FIG. 7 may combine one or moreprocesses in order to simplify and/or clarify the method for providingor fabricating a substrate. In some implementations, the order of theprocesses may be changed or modified.

The method provides (at 705) a carrier 500. Different implementationsmay use different materials for the carrier. The carrier may include asubstrate, glass, quartz and/or carrier tape. Stage 1 of FIG. 5Aillustrates a state after a carrier is provided.

The method forms (at 710) a metal layer over the carrier 500. The metallayer may be patterned to form interconnects. A plating process may beused to form the metal layer and interconnects. Stage 1 of FIG. 5Aillustrates a state after a metal layer and interconnects 502 areformed.

The method forms (at 715) at least one inner dielectric layer (e.g.,dielectric layer 520) over the carrier 500 and the interconnects 502.The dielectric layer 520 may include polyimide. Forming the dielectriclayer may also include forming a plurality of cavities (e.g., 510) inthe dielectric layer 520. A deposition process may be used to form theat least one inner dielectric layer. The plurality of cavities may beformed using an etching process (e.g., photo etching) or laser process.Stages 2-3 of FIG. 5A illustrate forming a dielectric layer and cavitiesin the dielectric layer.

The method forms (at 720) interconnects in and over the inner dielectriclayer. For example, the interconnects 512 may be formed in and over thedielectric layer 520. A plating process may be used to form theinterconnects. Forming interconnects may include providing a patternedmetal layer over and/or in the dielectric layer. Stage 4 of FIG. 5Aillustrates an example of forming interconnects in and over a dielectriclayer.

In some implementations, several inner dielectric layers (e.g., 522,524) and several interconnects may be formed in and over the innerdielectric layers. Stages 2-10 of FIGS. 5A-5C illustrate examples offorming at least one inner dielectric layer and a plurality ofinterconnects in and over the inner dielectric layer(s).

The method forms (at 725) an outer dielectric layer 230 over the atleast one inner dielectric layer 220 and the plurality of interconnects222. The outer dielectric layer 230 may include a solder resist layer ora photo imageable dielectric (PID). A deposition process may be used toform the outer dielectric layer 230. Forming the outer dielectric layermay also include forming a plurality of cavities (e.g., 530) in theouter dielectric layer 230. The plurality of cavities may be formedusing an etching process or laser process. Stages 12-13 of FIGS. 5C-15Dillustrate forming an outer dielectric layer and cavities in the outerdielectric layer.

The method forms (at 730) routing interconnects in and/or over the outerdielectric layer. For example, the at least one routing interconnect 242may be formed. A plating process may be used to form the routinginterconnects. Forming routing interconnects may include providing apatterned metal layer over an in the outer dielectric layer 230. Stages14-16 of FIGS. 5D-5E may illustrate an example of forming interconnectsin and over an outer dielectric layer.

The method forms (at 735) a cover dielectric layer (e.g., 240) over theouter dielectric layer 230 and the at least one routing interconnect242. The cover dielectric layer 240 may include a solder resist layer ora photo imageable dielectric (PID). A deposition process may be used toform the cover dielectric layer 240. Stages 17-19 of FIGS. 5E-5F mayillustrate an example of forming a cover dielectric layer.

As mentioned above, the method may form the dielectric layers indifferent order. For example, in some implementations, at least onecover dielectric layer may be formed before at least one outerdielectric layer is formed. Such an example is described in at leastFIGS. 6A-6B above. Different implementations may use different processesfor forming the metal layer(s). In some implementations, a chemicalvapor deposition (CVD) process and/or a physical vapor deposition (PVD)process for forming the metal layer(s). For example, a sputteringprocess, a spray coating process, and/or a plating process may be usedto form the metal layer(s).

Exemplary Sequence for Fabricating a Package that Includes a Substratewith Interconnects Located Over an Outer Dielectric Layer

FIG. 8 (which includes FIGS. 8A-8B) illustrates an exemplary sequencefor providing or fabricating a package that includes a substrate. Insome implementations, the sequence of FIGS. 8A-8B may be used to provideor fabricate the package 200 that includes the substrate 202 of FIG. 2,or any of the packages described in the disclosure.

It should be noted that the sequence of FIGS. 8A-8B may combine one ormore stages in order to simplify and/or clarify the sequence forproviding or fabricating the package. In some implementations, the orderof the processes may be changed or modified. In some implementations,one or more of processes may be replaced or substituted withoutdeparting from the spirit of the disclosure. The sequence of FIGS. 8A-8Bmay be used to fabricate one package or several packages at a time (aspart of a wafer).

Stage 1, as shown in FIG. 8A, illustrates a state after the substrate202 is provided. The substrate 202 may be provided by a supplier orfabricated. A process similar to the process shown in FIGS. 5A-5F may beused to fabricate the substrate 202. However, different implementationsmay use different processes to fabricate the substrate 202. Examples ofprocesses that may be used to fabricate the substrate 202 include asemi-additive process (SAP) and a modified semi-additive process (mSAP).

The substrate 202 includes a first surface (e.g., top surface) and asecond surface (e.g., bottom surface). The substrate 202 includes atleast one inner dielectric layer 220, a plurality of interconnects 222,a solder resist layer 224, an outer dielectric layer 230, a coverdielectric layer 240, and at least one routing interconnect 242. Theplurality of interconnects 222 is located at least in and over the atleast one inner dielectric layer 220. The plurality of interconnects 222includes at least one pad 222 a located on a bottom metal layer of thesubstrate 202. The pad 222 a is configured to be coupled to a solderinterconnect from the plurality of solder interconnects 280. The outerdielectric layer 230 is located over the at least one inner dielectriclayer 220. The at least one routing interconnect 242 is coupled to theplurality of interconnects 222. The at least one routing interconnect242 is located over the outer dielectric layer 230. The at least onerouting interconnect 242 is located over (or under, depending on how topand bottom are arbitrarily defined) the bottom metal layer of substrate202. The cover dielectric layer 240 is located over the outer dielectriclayer 230 and the at least one routing interconnect 242.

Stage 2 illustrates a state after the plurality of solder interconnects280 is coupled to the substrate 202. The solder interconnect 280 may becoupled to a bottom metal layer of the substrate 202. For example, thesolder interconnect 280 may be coupled to the pad 222 a (which islocated on a bottom metal layer) of the substrate 202. A reflow processmay be used to couple the solder interconnect 280 to the substrate 202.

Stage 3, as shown in FIG. 8B, illustrates a state after the firstintegrated device 205 is coupled to a first surface (e.g., top surface)of the substrate 202 through the plurality of interconnects 250. Theplurality of interconnects 250 may be coupled to interconnects from theplurality of interconnects 222 of the substrate 202. Stage 3 alsoillustrates a state after the second integrated device 206 is coupled tothe first surface (e.g., top surface) of the substrate 202 through theplurality of interconnects 260. The plurality of interconnects 260 maybe coupled to interconnects from the plurality of interconnects 222 ofthe substrate 202. A reflow process may be used to couple the firstintegrated device 205 and/or the second integrated device 206 to thesubstrate 202.

Stage 4 illustrate a state after the encapsulation layer 208 is formedover the first surface of the substrate 202 such that the encapsulationlayer 208 encapsulates the first integrated device 205 and the secondintegrated device 206. The process of forming and/or disposing theencapsulation layer 208 may include using a compression and transfermolding process, a sheet molding process, or a liquid molding process.Stage 4 may illustrate the package 200 that includes the substrate 202,the first integrated device 205, the second integrated device 206 andthe encapsulation layer 208.

The packages (e.g., 200, 400) described in the disclosure may befabricated one at a time or may be fabricated together as part of one ormore wafers and then singulated into individual packages.

Exemplary Flow Diagram of a Method for Fabricating a Package thatIncludes a Substrate with Interconnects Located Over an Outer DielectricLayer

In some implementations, fabricating a package that includes a substrateincludes several processes. FIG. 9 illustrates an exemplary flow diagramof a method 900 for providing or fabricating a package that includes asubstrate. In some implementations, the method 900 of FIG. 9 may be usedto provide or fabricate the package 200 of FIG. 2 described in thedisclosure. However, the method 900 may be used to provide or fabricateany of the packages described in the disclosure.

It should be noted that the method of FIG. 9 may combine one or moreprocesses in order to simplify and/or clarify the method for providingor fabricating a package that a substrate. In some implementations, theorder of the processes may be changed or modified.

The method provides (at 905) a substrate (e.g., 202, 402). The substrate202 may be provided by a supplier or fabricated. The substrate 202includes a first surface (e.g., top surface) and a second surface (e.g.,bottom surface). The substrate 202 may include at least one innerdielectric layer 220, a plurality of interconnects 222, a solder resistlayer 224, an outer dielectric layer 230, a cover dielectric layer 240,and at least one routing interconnect 242. The plurality ofinterconnects 222 is located at least in and over the at least one innerdielectric layer 220. The plurality of interconnects 222 includes atleast one pad 222 a located on a bottom metal layer of the substrate202. The pad 222 a is configured to be coupled to a solder interconnectfrom the plurality of solder interconnects 280. The outer dielectriclayer 230 is located over the at least one inner dielectric layer 220.The at least one routing interconnect 242 is coupled to the plurality ofinterconnects 222. The at least one routing interconnect 242 is locatedover the outer dielectric layer 230. The at least one routinginterconnect 242 is located below the bottom metal layer of substrate202. The cover dielectric layer 240 is located over the outer dielectriclayer 230 and the at least one routing interconnect 242.

Different implementations may provide different substrates. A processsimilar to the process shown in FIGS. 5A-5F may be used to fabricate thesubstrate 202. However, different implementations may use differentprocesses to fabricate the substrate 202. Stage 1 of FIG. 8A illustratesand describes an example of providing a substrate.

The method couples (at 910) the plurality of solder interconnects (e.g.,280) to the substrate (e.g., 202). The solder interconnect 280 may becoupled to a bottom metal layer of the substrate 202. For example, thesolder interconnect 280 may be coupled to the pad 222 a (which islocated on a bottom metal layer) of the substrate 202. A reflow processmay be used to couple the solder interconnect 280 to the substrate 202.Stage 2 of FIG. 8A illustrates and describes an example of couplingsolder interconnects to a substrate.

The method couples (at 915) components to the substrate (e.g., 202). Forexample, the method may couple the first integrated device 205 to afirst surface (e.g., top surface) of the substrate 202 through theplurality of interconnects 250. The plurality of interconnects 250 maybe coupled to interconnects from the plurality of interconnects 222 ofthe substrate 202. The method may couple the second integrated device206 to a first surface (e.g., top surface) of the substrate 202 throughthe plurality of interconnects 260. The plurality of interconnects 260may be coupled to interconnects from the plurality of interconnects 222of the substrate 202. A reflow process may be used to couple the firstintegrated device 205 and/or the second integrated device 206 to thesubstrate 202. Stage 3 of FIG. 8B illustrates and describes an exampleof coupling components to a substrate.

The method forms (at 925) an encapsulation layer (e.g., 208) over thefirst surface of the substrate (e.g., 202). The encapsulation layer maybe formed over the first surface of the substrate such that theencapsulation layer 208 encapsulates the first integrated device 205 andthe second integrated device 206 (which are example of components). Theprocess of forming and/or disposing the encapsulation layer 208 mayinclude using a compression and transfer molding process, a sheetmolding process, or a liquid molding process. Stage 4 of FIG. 8B,illustrates and describes an example of an encapsulation layer that islocated over the substrate and encapsulates the integrated device.

Exemplary Package on Package (PoP) Comprising a Package Having aSubstrate with Interconnects Located Over an Outer Dielectric Layer

FIG. 10 illustrates a profile view of a package on package (PoP) 1000that includes a package 1001 and a package 1003 that includesinterconnects located over an outer dielectric layer. The package 1001is coupled to the package 1003 through the plurality of solderinterconnects 1080. The package 1001 is located over the package 1003.The PoP 1000 is coupled to a board 290 (e.g., printed circuit board(PCB)) through a plurality of solder interconnects 280 of the package1003. The package 1003 provides a package with a compact small factorwhile also having an improved routing interconnect design.

The package 1003 of FIG. 10 is similar to the package 200 of FIG. 2, andthus include similar components as the package 200. The package 1003includes a plurality of vias 1088 that travel through the encapsulationlayer 208. The plurality of vias 1088 may include through mold vias(TMVs). The plurality of vias 1088 is coupled to the plurality ofinterconnects 222. The package 1003 includes a plurality of upperrouting interconnects 1042 that is located over the encapsulation layer208. The plurality of upper routing interconnects 1042 may be coupled tothe plurality of vias 1088. An upper cover dielectric layer 1040 islocated over the plurality of upper routing interconnects 1042 and theencapsulation layer 208. The plurality of upper routing interconnects1042 is located (e.g., laterally located) between the plurality ofsolder interconnects 1080. The plurality of upper routing interconnects1042 may be means for upper routing interconnect. An encapsulation layer1070 may be located between the package 1001 and the package 1003.

The package 1001 includes a substrate 1002, an integrated device 1006,and an encapsulation layer 1008. The substrate 1002 includes at leastone dielectric layer 1020 and a plurality of interconnects 1022. Theintegrated device 1006 is coupled to the substrate 1002. Theencapsulation layer 1008 is coupled to the substrate 1002 andencapsulates the integrated device 1006.

In some implementations, the package 1001 may be similar to the package200, and thus the package 1001 may include an outer dielectric layer(e.g., 230) and/or a cover dielectric layer (e.g., 240).

As used in the disclosure, when a particular dielectric layer is located“over” another dielectric layer, the particular dielectric layer may belocated above or below the another dielectric layer, depending on how abottom (e.g., bottom layer) or top (e.g., top layer) is arbitrarilydefined. A particular dielectric layer that is located “over” anotherdielectric layer (whether above or below) may mean that the particulardielectric layer is coupled to a surface of the another dielectriclayer. For example, a surface of the particular dielectric layer may bein contact (e.g., touching) another surface of the another dielectriclayer.

Exemplary Sequence for Fabricating a Package on Package (PoP) Comprisinga Package that Includes a Substrate with Interconnects Located Over anOuter Dielectric Layer

FIG. 11 (which includes FIGS. 11A-11C) illustrates an exemplary sequencefor providing or fabricating a package on package (PoP). In someimplementations, the sequence of FIGS. 11A-11C may be used to provide orfabricate the PoP 1000 of FIG. 10, or any of the PoPs described in thedisclosure.

It should be noted that the sequence of FIGS. 11A-11C may combine one ormore stages in order to simplify and/or clarify the sequence forproviding or fabricating the PoP. In some implementations, the order ofthe processes may be changed or modified. In some implementations, oneor more of processes may be replaced or substituted without departingfrom the spirit of the disclosure. The sequence of FIGS. 11A-11C may beused to fabricate one PoP or several PoP at a time (as part of a wafer).

Stage 1, as shown in FIG. 11A, illustrates a state after the package 200is provided or fabricated. FIGS. 8A-8B illustrate an example ofproviding a package. The package 200 may include a substrate thatincludes at least one routing interconnect, an outer dielectric layerand a cover dielectric layer, as described in FIG. 2.

Stage 2 illustrates a state after cavities 1110 are formed in theencapsulation layer 208 of the package 200. A laser process and/or anetching process may be used to form the cavities 1110 in theencapsulation layer 208.

Stage 3 illustrates a state after vias 1088 are formed in the cavities1110 of the encapsulation layer 208. A pasting process and/or platingprocess may be used to form the vias 1088. The vias 1088 may be coupledto the plurality of interconnects 222 of the substrate 202.

Stage 4, as shown in FIG. 11B, illustrates a state after a plurality ofupper routing interconnects 1042 is formed over the encapsulation layer208. The plurality of upper routing interconnects 1042 may be coupled tothe vias 1088. A plating process may be used to form the plurality ofupper routing interconnects 1042.

Stage 5 illustrates a state after an upper cover dielectric layer 1040is formed over the plurality of upper routing interconnects 1042 and theencapsulation layer 208. A deposition process may be used to dispose theupper cover dielectric layer 1040 over the plurality of upper routinginterconnects 1042 and the encapsulation layer 208. The upper coverdielectric layer 1040 may include a solder resist layer or a photoimageable dielectric (PID). The package 1003 may be fabricated from thepackage 200.

Stage 6, as shown in FIG. 11C, illustrates a state after the package1001 is coupled to the package 1003 through the plurality of solderinterconnects 1080. A reflow process may be used to couple the package1001 to the package 1003. The package 1001 includes a substrate 1002, anintegrated device 1006, and an encapsulation layer 1008. The substrate1002 includes at least one dielectric layer 1020 and a plurality ofinterconnects 1022. The integrated device 1006 is coupled to thesubstrate 1002. The encapsulation layer 1008 is coupled to the substrate1002 and encapsulates the integrated device 1006. The package 1001 maybe fabricated using a similar process to fabricate the package 1003.

Stage 7 illustrates a state after an encapsulation layer 1070 is formedbetween the package 1001 and the package 1003. The process of formingand/or disposing the encapsulation layer 10070 may include using acompression and transfer molding process, a sheet molding process, or aliquid molding process to form the encapsulation layer 1070 between theencapsulation layer 208 and the substrate 1002. Stage 7 illustrates thePoP 1000 that includes the package 1001 and the package 1003.

Exemplary Electronic Devices

FIG. 12 illustrates various electronic devices that may be integratedwith any of the aforementioned device, integrated device, integratedcircuit (IC) package, integrated circuit (IC) device, semiconductordevice, integrated circuit, die, interposer, package, package-on-package(PoP), System in Package (SiP), or System on Chip (SoC). For example, amobile phone device 1202, a laptop computer device 1204, a fixedlocation terminal device 1206, a wearable device 1208, or automotivevehicle 1210 may include a device 1200 as described herein. The device1200 may be, for example, any of the devices and/or integrated circuit(IC) packages described herein. The devices 1202, 1204, 1206 and 1208and the vehicle 1210 illustrated in FIG. 12 are merely exemplary. Otherelectronic devices may also feature the device 1200 including, but notlimited to, a group of devices (e.g., electronic devices) that includesmobile devices, hand-held personal communication systems (PCS) units,portable data units such as personal digital assistants, globalpositioning system (GPS) enabled devices, navigation devices, set topboxes, music players, video players, entertainment units, fixed locationdata units such as meter reading equipment, communications devices,smartphones, tablet computers, computers, wearable devices (e.g.,watches, glasses), Internet of things (IoT) devices, servers, routers,electronic devices implemented in automotive vehicles (e.g., autonomousvehicles), or any other device that stores or retrieves data or computerinstructions, or any combination thereof.

One or more of the components, processes, features, and/or functionsillustrated in FIGS. 2-4, 5A-5F, 6A-6B, 7, 8A-8B, 9-10, 11A-11C and/or12 may be rearranged and/or combined into a single component, process,feature or function or embodied in several components, processes, orfunctions. Additional elements, components, processes, and/or functionsmay also be added without departing from the disclosure. It should alsobe noted FIGS. 2-4, 5A-5F, 6A-6B, 7, 8A-8B, 9-10, 11A-11C and/or 12 andits corresponding description in the present disclosure is not limitedto dies and/or ICs. In some implementations, FIGS. 2-4, 5A-5F, 6A-6B, 7,8A-8B, 9-10, 11A-11C and/or 12 and its corresponding description may beused to manufacture, create, provide, and/or produce devices and/orintegrated devices. In some implementations, a device may include a die,an integrated device, an integrated passive device (IPD), a die package,an integrated circuit (IC) device, a device package, an integratedcircuit (IC) package, a wafer, a semiconductor device, apackage-on-package (PoP) device, a heat dissipating device and/or aninterposer.

It is noted that the figures in the disclosure may represent actualrepresentations and/or conceptual representations of various parts,components, objects, devices, packages, integrated devices, integratedcircuits, and/or transistors. In some instances, the figures may not beto scale. In some instances, for purpose of clarity, not all componentsand/or parts may be shown. In some instances, the position, thelocation, the sizes, and/or the shapes of various parts and/orcomponents in the figures may be exemplary. In some implementations,various components and/or parts in the figures may be optional.

The word “exemplary” is used herein to mean “serving as an example,instance, or illustration.” Any implementation or aspect describedherein as “exemplary” is not necessarily to be construed as preferred oradvantageous over other aspects of the disclosure. Likewise, the term“aspects” does not require that all aspects of the disclosure includethe discussed feature, advantage or mode of operation. The term“coupled” is used herein to refer to the direct or indirect couplingbetween two objects. For example, if object A physically touches objectB, and object B touches object C, then objects A and C may still beconsidered coupled to one another—even if they do not directlyphysically touch each other. The term “electrically coupled” may meanthat two objects are directly or indirectly coupled together such thatan electrical current (e.g., signal, power, ground) may travel betweenthe two objects. Two objects that are electrically coupled may or maynot have an electrical current traveling between the two objects. Theuse of the terms “first”, “second”, “third” and “fourth” (and/oranything above fourth) is arbitrary. Any of the components described maybe the first component, the second component, the third component or thefourth component. For example, a component that is referred to a secondcomponent, may be the first component, the second component, the thirdcomponent or the fourth component. The term “encapsulating” means thatthe object may partially encapsulate or completely encapsulate anotherobject. The terms “top” and “bottom” are arbitrary. A component that islocated on top may be located over a component that is located on abottom. A top component may be considered a bottom component, and viceversa. As described in the disclosure, a first component that is located“over” a second component may mean that the first component is locatedabove or below the second component, depending on how a bottom or top isarbitrarily defined. In another example, a first component may belocated over (e.g., above) a first surface of the second component, anda third component may be located over (e.g., below) a second surface ofthe second component, where the second surface is opposite to the firstsurface. It is further noted that the term “over” as used in the presentapplication in the context of one component located over anothercomponent, may be used to mean a component that is on another componentand/or in another component (e.g., on a surface of a component orembedded in a component). Thus, for example, a first component that isover the second component may mean that (1) the first component is overthe second component, but not directly touching the second component,(2) the first component is on (e.g., on a surface of) the secondcomponent, and/or (3) the first component is in (e.g., embedded in) thesecond component. The term “about ‘value X’”, or “approximately valueX”, as used in the disclosure means within 10 percent of the ‘value X’.For example, a value of about 1 or approximately 1, would mean a valuein a range of 0.9-1.1.

In some implementations, an interconnect is an element or component of adevice or package that allows or facilitates an electrical connectionbetween two points, elements and/or components. In some implementations,an interconnect may include a trace, a via, a pad, a pillar, aredistribution metal layer, and/or an under bump metallization (UBM)layer. An interconnect may include one or more metal components (e.g.,seed layer+metal layer). In some implementations, an interconnect is anelectrically conductive material that may be configured to provide anelectrical path for a current (e.g., a data signal, ground or power). Aninterconnect may be part of a circuit. An interconnect may include morethan one element or component. An interconnect may be defined by one ormore interconnects. Different implementations may use similar ordifferent processes to form the interconnects. In some implementations,a chemical vapor deposition (CVD) process and/or a physical vapordeposition (PVD) process for forming the interconnects. For example, asputtering process, a spray coating, and/or a plating process may beused to form the interconnects.

Also, it is noted that various disclosures contained herein may bedescribed as a process that is depicted as a flowchart, a flow diagram,a structure diagram, or a block diagram. Although a flowchart maydescribe the operations as a sequential process, many of the operationscan be performed in parallel or concurrently. In addition, the order ofthe operations may be re-arranged. A process is terminated when itsoperations are completed.

The various features of the disclosure described herein can beimplemented in different systems without departing from the disclosure.It should be noted that the foregoing aspects of the disclosure aremerely examples and are not to be construed as limiting the disclosure.The description of the aspects of the present disclosure is intended tobe illustrative, and not to limit the scope of the claims. As such, thepresent teachings can be readily applied to other types of apparatusesand many alternatives, modifications, and variations will be apparent tothose skilled in the art.

In the following, further examples are described to facilitate theunderstanding of the invention.

In one further example, a package is described, the package comprising:a substrate comprising: (i) at least one inner dielectric layer, (ii) aplurality of interconnects located in the at least one inner dielectriclayer, wherein the plurality of interconnects includes a pad located ona bottom metal layer of the substrate, (iii) an outer dielectric layerlocated over the at least one inner dielectric layer (e.g., over asurface of the at least one inner dielectric layer), (iv) at least onerouting interconnect coupled to the plurality of interconnects, whereinthe at least one routing interconnect is located over the outerdielectric layer (e.g., over a surface of the outer dielectric layer),wherein the at least one routing interconnect is located over the bottommetal layer of the substrate, and (v) a cover dielectric layer locatedover the outer dielectric layer and the at least one routinginterconnect, an integrated device coupled to the substrate, and asolder interconnect coupled to the pad located on the bottom metal layerof the substrate. The outer dielectric layer may include a differentmaterial than the at least one inner dielectric layer. The coverdielectric layer may include a different material than the at least oneinner dielectric layer. The cover dielectric layer may include adifferent material than the at least one inner dielectric layer and theouter dielectric layer. Further, the cover dielectric layer and theouter dielectric layer each may include a different material than the atleast one inner dielectric layer. Further, the cover dielectric layerand the outer dielectric layer each may include a same material. The atleast one inner dielectric layer may include a copper clad laminate(CCL) core, a prepreg, an ajinomoto build up film (ABF), and/or a resincoated copper (RCC). Also, the outer dielectric layer and the coverdielectric layer, each may include a solder resist layer and/or a photoimageable dielectric (PID). Further, a first electrical signal to and/orfrom the integrated device may be configured to travel through the atleast one routing interconnect. Further, the package may comprise anencapsulation layer located over the substrate, at least one via locatedin the encapsulation layer, at least one upper routing interconnectcoupled to the at least one via, wherein the at least one upper routinginterconnect is located over the encapsulation layer, and an upper coverdielectric layer located over the at least one upper routinginterconnect and the encapsulation layer. A first electrical signal toand/or from the integrated device may be configured to travel throughthe at least one upper routing interconnect. Further, the package may bepart of a package on package (PoP). The bottom metal layer of thesubstrate may be a metal layer that is vertically closest to the solderinterconnect without being laterally positioned next to the solderinterconnect. The package may be incorporated into a device selectedfrom a group consisting of a music player, a video player, anentertainment unit, a navigation device, a communications device, amobile device, a mobile phone, a smartphone, a personal digitalassistant, a fixed location terminal, a tablet computer, a computer, awearable device, a laptop computer, a server, an internet of things(IoT) device, and a device in an automotive vehicle.

In yet another further example, an apparatus is described, the apparatuscomprising: a substrate comprising: (i) at least one inner dielectriclayer, (ii) a plurality of interconnects located in the at least oneinner dielectric layer, wherein the plurality of interconnects includesa pad located on a bottom metal layer of the substrate, (iii) an outerdielectric layer located over the at least one inner dielectric layer,(iv) means for routing interconnect coupled to the plurality ofinterconnects, wherein the means for routing interconnect is locatedover the outer dielectric layer, wherein the means for routinginterconnect is located over the bottom metal layer of the substrate,and (v) a cover dielectric layer located over the outer dielectric layerand the means for routing interconnect, an integrated device coupled tothe substrate, and a solder interconnect coupled to the pad located onthe bottom metal layer of the substrate. The outer dielectric layer mayinclude a different material than the at least one inner dielectriclayer. The cover dielectric layer may include a different material thanthe at least one inner dielectric layer. The cover dielectric layer mayinclude a different material than the at least one inner dielectriclayer and the outer dielectric layer. The cover dielectric layer and theouter dielectric layer each may include a different material than the atleast one inner dielectric layer. The cover dielectric layer and theouter dielectric layer each may include a same material. A firstelectrical signal to and/or from the integrated device may be configuredto travel through the means for routing interconnect. Also, theapparatus may comprise means for encapsulation located over thesubstrate, at least one via located in the means for encapsulation,means for upper routing interconnect coupled to the at least one via,wherein the means for upper routing interconnect is located over themeans for encapsulation and an upper cover dielectric layer located overthe means for upper routing interconnect and the means forencapsulation. Further, a first electrical signal to and/or from theintegrated device may be configured to travel through the means forupper routing interconnect.

In yet another further example, a method for fabricating package may bedescribed, the method comprising: providing a substrate comprising: (i)at least one inner dielectric layer, (ii) a plurality of interconnectslocated in the at least one inner dielectric layer, wherein theplurality of interconnects includes a pad located on a bottom metallayer of the substrate, (iii) an outer dielectric layer located over theat least one inner dielectric layer, (iv) at least one routinginterconnect coupled to the plurality of interconnects, wherein the atleast one routing interconnect is located over the outer dielectriclayer, wherein the at least one routing interconnect is located over thebottom metal layer of the substrate, and (v) a cover dielectric layerlocated over the outer dielectric layer and the at least one routinginterconnect, coupling an integrated device to the substrate andcoupling a solder interconnect to the pad located on the bottom metallayer of the substrate. The method may further comprise forming anencapsulation layer over the substrate, forming at least one via in theencapsulation layer, forming at least one upper routing interconnectover the encapsulation layer, wherein the at least one upper routinginterconnect is coupled to the at least one via, and forming an uppercover dielectric layer over the at least one upper routing interconnectand the encapsulation layer.

In one another example, a package is described, the package comprising:a substrate comprising: (i) at least one inner dielectric layer, (ii) aplurality of interconnects located in the at least one inner dielectriclayer, wherein the plurality of interconnects includes a pad located ona bottom metal layer of the substrate, (iii) an outer dielectric layerlocated over the at least one inner dielectric layer (e.g., over asurface of the at least one inner dielectric layer), (iv) a coverdielectric layer located over the at least one inner dielectric layer(e.g., over a surface of the at least one inner dielectric layer), (v)at least one routing interconnect coupled to the plurality ofinterconnects, wherein the at least one routing interconnect is locatedover the cover dielectric layer (e.g., over a surface of the coverdielectric layer), wherein the at least one routing interconnect islocated over the bottom metal layer of the substrate, and (v) a secondouter dielectric layer located over the cover dielectric layer and theat least one routing interconnect, an integrated device coupled to thesubstrate, and a solder interconnect coupled to the pad located on thebottom metal layer of the substrate.

The invention claimed is:
 1. A package comprising: a substrate comprising: (i) at least one inner dielectric layer; (ii) a plurality of interconnects located in the at least one inner dielectric layer, wherein the plurality of interconnects includes a pad located on a bottom metal layer of the substrate; (iii) an outer dielectric layer located over the at least one inner dielectric layer; (iv) at least one routing interconnect coupled to the plurality of interconnects, wherein the at least one routing interconnect is located over the outer dielectric layer, wherein the at least one routing interconnect is located over the bottom metal layer of the substrate, and (v) a cover dielectric layer located over the outer dielectric layer and the at least one routing interconnect; an integrated device coupled to the substrate; and a solder interconnect coupled to the pad located on the bottom metal layer of the substrate.
 2. The package of claim 1, wherein the outer dielectric layer includes a different material than the at least one inner dielectric layer.
 3. The package of claim 1, wherein the cover dielectric layer includes a different material than the at least one inner dielectric layer.
 4. The package of claim 1, wherein the cover dielectric layer includes a different material than the at least one inner dielectric layer and the outer dielectric layer.
 5. The package of claim 1, wherein the cover dielectric layer and the outer dielectric layer each includes a different material than the at least one inner dielectric layer.
 6. The package of claim 1, wherein the cover dielectric layer and the outer dielectric layer each includes a same material.
 7. The package of claim 1, wherein the at least one inner dielectric layer includes a copper clad laminate (CCL) core, a prepreg, an ajinomoto build up film (ABF), and/or a resin coated copper (RCC).
 8. The package of claim 1, wherein the outer dielectric layer and the cover dielectric layer, each includes a solder resist layer and/or a photo imagable dielectric (PID).
 9. The package of claim 1, wherein a first electrical signal to and/or from the integrated device is configured to travel through the at least one routing interconnect.
 10. The package of claim 1, further comprising: an encapsulation layer located over the substrate; at least one via located in the encapsulation layer; at least one upper routing interconnect coupled to the at least one via, wherein the at least one upper routing interconnect is located over the encapsulation layer; an upper cover dielectric layer located over the at least one upper routing interconnect and the encapsulation layer, wherein the outer dielectric layer is located below a bottom surface of the at least one inner dielectric layer, wherein the at least one routing interconnect is located below bottom surface of the outer dielectric layer, and wherein the cover dielectric layer is located below the bottom surface of the outer dielectric layer and the at least one routing interconnect.
 11. The package of claim 10, wherein a first electrical signal to and/or from the integrated device is configured to travel through the at least one upper routing interconnect.
 12. The package of claim 10, wherein the package is part of a package on package (PoP).
 13. The package of claim 1, wherein the bottom metal layer of the substrate is a metal layer that is vertically closest to the solder interconnect without being laterally positioned next to the solder interconnect.
 14. The package of claim 1, wherein the package is incorporated into a device selected from a group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a fixed location terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an internet of things (IoT) device, and a device in an automotive vehicle.
 15. An apparatus comprising: a substrate comprising: (i) at least one inner dielectric layer; (ii) a plurality of interconnects located in the at least one inner dielectric layer, wherein the plurality of interconnects includes a pad located on a bottom metal layer of the substrate; (iii) an outer dielectric layer located over the at least one inner dielectric layer; (iv) means for routing interconnect coupled to the plurality of interconnects, wherein the means for routing interconnect is located over the outer dielectric layer, wherein the means for routing interconnect is located over the bottom metal layer of the substrate, and (v) a cover dielectric layer located over the outer dielectric layer and the means for routing interconnect; an integrated device coupled to the substrate; and a solder interconnect coupled to the pad located on the bottom metal layer of the substrate.
 16. The apparatus of claim 15, wherein the outer dielectric layer includes a different material than the at least one inner dielectric layer.
 17. The apparatus of claim 15, wherein the cover dielectric layer includes a different material than the at least one inner dielectric layer.
 18. The apparatus of claim 15, wherein the cover dielectric layer includes a different material than the at least one inner dielectric layer and the outer dielectric layer.
 19. The apparatus of claim 15, wherein the cover dielectric layer and the outer dielectric layer each includes a different material than the at least one inner dielectric layer.
 20. The apparatus of claim 15, wherein the cover dielectric layer and the outer dielectric layer each includes a same material.
 21. The apparatus of claim 15, wherein a first electrical signal to and/or from the integrated device is configured to travel through the means for routing interconnect.
 22. The apparatus of claim 15, further comprising: means for encapsulation located over the substrate; at least one via located in the means for encapsulation; means for upper routing interconnect coupled to the at least one via, wherein the means for upper routing interconnect is located over the means for encapsulation; and an upper cover dielectric layer located over the means for upper routing interconnect and the means for encapsulation.
 23. The apparatus of claim 22, wherein a first electrical signal to and/or from the integrated device is configured to travel through the means for upper routing interconnect.
 24. The apparatus of claim 15, wherein the outer dielectric layer is (i) coupled to the at least one inner dielectric layer and (ii) located below the at least one inner dielectric layer, wherein the means for routing interconnect is located below the outer dielectric layer, and wherein the cover dielectric layer is (i) coupled to the outer dielectric layer and the means for routing interconnect, and (ii) located below the outer dielectric layer.
 25. A package comprising: a substrate comprising: (i) at least one inner dielectric layer; (ii) a plurality of interconnects located in the at least one inner dielectric layer, wherein the plurality of interconnects includes a pad located on a bottom metal layer of the substrate; (iii) a first outer dielectric layer located over the at least one inner dielectric layer; (iv) a cover dielectric layer located over the at least one inner dielectric layer; (v) at least one routing interconnect coupled to the plurality of interconnects, wherein the at least one routing interconnect is located over the cover dielectric layer, wherein the at least one routing interconnect is located over the bottom metal layer of the substrate, and (vi) a second outer dielectric layer located over the cover dielectric layer and the at least one routing interconnect; an integrated device coupled to the substrate; and a solder interconnect coupled to the pad located on the bottom metal layer of the substrate.
 26. The package of claim 25, wherein the second outer dielectric layer and the first outer dielectric layer are a same dielectric layer.
 27. A method for fabricating package, comprising: providing a substrate comprising: (i) at least one inner dielectric layer; (ii) a plurality of interconnects located in the at least one inner dielectric layer, wherein the plurality of interconnects includes a pad located on a bottom metal layer of the substrate; (iii) an outer dielectric layer located over the at least one inner dielectric layer; (iv) at least one routing interconnect coupled to the plurality of interconnects, wherein the at least one routing interconnect is located over the outer dielectric layer, wherein the at least one routing interconnect is located over the bottom metal layer of the substrate, and (v) a cover dielectric layer located over the outer dielectric layer and the at least one routing interconnect; coupling an integrated device to the substrate; and coupling a solder interconnect to the pad located on the bottom metal layer of the substrate.
 28. The method of claim 27, further comprising: forming an encapsulation layer over the substrate; forming at least one via in the encapsulation layer; forming at least one upper routing interconnect over the encapsulation layer, wherein the at least one upper routing interconnect is coupled to the at least one via; and forming an upper cover dielectric layer over the at least one upper routing interconnect and the encapsulation layer. 